Nanometer scale wire structures fabricated by diffusion‐induced selective disordering of a GaAs(AlGaAs) quantum well
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چکیده
منابع مشابه
Luminescent characteristics of InGaAsP/InP multiple quantum well structures by impurity-free vacancy disordering
InGaAsP/InP multiple quantum wells with quantum well intermixing (QWI) have been prepared by Impurity-Free Vacancy Disordering (IFVD). The luminescent characteristics were investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap blueshift was observed. Si3N4, SiO2 and SOG (spin on glass) were used for the dielectric layer to enhance intermixing from the outdi...
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S. Kicin, J. Novák, R. Kúdela, S. Hasenöhrl, M. Kucera, A. Kromka, I. Kostic, A. Schwarz and D. Meertens a Institute of Electrical Engineering, SAS, Bratislava, Slovakia b FEI STU-Department of Microelectronics, Bratislava, Slovakia c Institute of Informatics, SAS, Bratislava, Slovakia d Institute for Thin Film and Ion Technology (ISI), Research Centre Jülich, Germany e Institute of Solid State...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1989
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.101037